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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD57 series Ultra-fast soft-recovery controlled avalanche rectifiers
Product specification Supersedes data of 1998 Dec 04 1999 Nov 11
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Shipped in 8 mm embossed tape * Smallest surface mount rectifier outline.
MAM061
BYD57 series
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD87 package through ImplotecTM(1) technology. The SOD87 is
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V VR continuous reverse voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V IF(AV) average forward current BYD57D to M BYD57U and V IF(AV) average forward current BYD57D to M BYD57U and V IFRM repetitive peak forward current BYD57D to M BYD57U and V Ttp = 85 C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 C; PCB mounting (see Fig.17); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 Ttp = 85 C; see Figs 6 and 7 - - 8.5 11 A A - - - - - - - - - - - 200 400 600 800 1000 1200 1400 1.0 1.2 0.4 0.4 V V V V V V V A A A A PARAMETER repetitive peak reverse voltage - - - - - - - 200 400 600 800 1000 1200 1400 V V V V V V V CONDITIONS MIN. MAX. UNIT
1999 Nov 11
2
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
SYMBOL IFRM PARAMETER repetitive peak forward current BYD57D to M BYD57U and V IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature see Fig.12 t = 10 ms half sinewave; Tj = 25 C prior to surge; VR = VRRMmax L = 120 mH; Tj = Tj max prior to surge; inductive load switched off CONDITIONS Tamb = 60 C; see Figs 8 and 9 - - - - -65 -65
BYD57 series
MIN.
MAX. 3.0 3.7 5.0 10 +175 +175 A A A
UNIT
mJ C C
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD57D to M BYD57U and V VF forward voltage BYD57D to M BYD57U and V V(BR)R reverse avalanche breakdown voltage BYD57D BYD57G BYD57J BYD57K BYD57M BYD57U BYD57V IR reverse current VR = VRRMmax; see Fig.15 VR = VRRMmax; Tj = 165 C; see Fig.15 trr reverse recovery time BYD57D to J BYD57K and M BYD57U and V Cd diode capacitance f = 1 MHz; VR = 0; see Fig.16 when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 IR = 0.1 mA 300 500 700 900 1100 1300 1500 - - - - - - - - - - - - - - - - - - 5 100 V V V V V V V A A IF = 1 A; see Figs 13 and 14 CONDITIONS IF = 1 A; Tj = Tj max; see Figs 13 and 14 MIN. - - - - TYP. - - - - MAX. 2.1 1.7 3.6 2.3 V V V V UNIT
- - - -
- - - 20
30 75 150 -
ns ns ns pF
1999 Nov 11
3
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
SYMBOL dI R -------dt PARAMETER maximum slope of reverse recovery current BYD57D to J BYD57K and M BYD57U and V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.19 MIN.
BYD57 series
TYP.
MAX.
UNIT
- - -
- - -
7 6 5
A/s A/s A/s
VALUE 30 150
UNIT K/W K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.17. For more information please refer to the `General Part of associated Handbook'.
1999 Nov 11
4
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
GRAPHICAL DATA
2.0 I F(AV) (A) 1.6
MSA961
BYD57 series
MGM273
handbook, halfpage
2.0
IF(AV) (A)
1.6
1.2
1.2
0.8
0.8
0.4
0.4
0
0
40
80
120
160 200 T tp (oC)
0 0 40 80 120 160 200 Ttp (C)
BYD57D to M a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
BYDU and V a = 1.42; VR = VRRMmax; = 0.5. Switched mode application.
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
0.5 I F(AV) (A) 0.4
MSA960
handbook, halfpage
0.6
MGM272
IF(AV) (A) 0.4 0.3
0.2 0.2 0.1
0 0 40 80 120 160 200 Tamb ( o C)
0 0 40 80 120 160 200 Tamb (C)
BYD57D to M a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.17. Switched mode application.
BYD57U and V a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.17. Switched mode application.
Fig.4
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
Fig.5
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
1999 Nov 11
5
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
BYD57 series
handbook, full pagewidth
10
MSA964
I FRM (A) 8
= 0.05
6
0.1
4
0.2
2
0.5 1
0 10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
BYD57D to M Ttp = 85 C; Rth j-tp = 30 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
16
MGM275
IFRM (A) 12 = 0.05
8
0.1
0.2 4 0.5 1 0 10-2 BYD57U and V Ttp = 85 C; Rth j-tp = 30 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V.
10-1
1
10
102
103
tp (ms)
104
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
6
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
BYD57 series
handbook, full pagewidth
4
MSA965
I FRM (A) 3 = 0.05
2
0.1
0.2 1
0.5 1
0 10 2
10 1
1
10
10 2
10 3
tp (ms)
10 4
BYD57D to M Tamb = 60 C; Rth j-a = 150K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
handbook, full pagewidth
4
MGM274
IFRM (A) 3
= 0.05
0.1
2 0.2
1
0.5 1
0 10-2
10-1
1
10
102
103
tp (ms)
104
BYD57U and V Tamb = 60 C; Rth j-a = 150K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 1000 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 11
7
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
MGC525
BYD57 series
MGM271
handbook, halfpage
3
handbook, halfpage
5
P (W)
a=3 2.5 2
1.57 1.42
P (W) 4 a = 3 2.5 2 1.57 1.42
2 3
2 1 1
0 0 0.5 IF(AV) (A) 1.0
0 0 0.4 0.8 1.2 1.6 2 IF(AV) (A)
BYD57D to M a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
BYD57U and V a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
handbook, halfpage
200
MBK457
handbook, halfpage
4
MSA963
IF (A) Tj ( oC) 3
100
2
D
G
J
K
M
U
V
1
0
0
1000
VR (V)
2000
0
2
4
6
V F (V)
8
Solid line = VR. Dotted line = VRRM; = 0.5.
BYD57D to M Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.12 Maximum permissible junction temperature as a function of reverse voltage.
Fig.13 Forward current as a function of forward voltage; maximum values.
1999 Nov 11
8
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
BYD57 series
handbook, halfpage
4
MGM270
10 3 handbook, halfpage IR (A) 10 2
MGC532
IF (A) 3
2
10 1
0 0 1 2 3 VF (V) 4
1
0
100
Tj ( C)
o
200
BYD57U and V Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
VR = VRRMmax.
Fig.14 Forward current as a function of forward voltage; maximum values.
Fig.15 Reverse current as a function of junction temperature; maximum values.
10 2 handbook, halfpage
MGC524
50
Cd (pF)
4.5 10 50 2.5
1 1 10 102
VR (V)
103
1.25
MSB213
f = 1 MHz; Tj = 25 C. Dimensions in mm.
Fig.16 Diode capacitance as a function of reverse voltage; typical values.
Fig.17 Printed-circuit board for surface mounting.
1999 Nov 11
9
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
BYD57 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
IF ndbook, halfpage dI F dt t rr 10% t dI R dt 100% IR
MGC499
Fig.19 Reverse recovery definitions.
1999 Nov 11
10
Philips Semiconductors
Product specification
Ultra-fast soft-recovery controlled avalanche rectifiers
PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors
BYD57 series
SOD87
k
(2)
a
D1
D
L DIMENSIONS (mm are the original dimensions) UNIT mm D 2.1 2.0 D1 2.0 1.8 H 3.7 3.3 L 0.3 H
L
0
1 scale
2 mm
Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. OUTLINE VERSION SOD87 REFERENCES IEC 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Nov 11
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/04/pp12
Date of release: 1999
Nov 11
Document order number:
9397 750 06267

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